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太陽充電器 Wafer
Wafer Specification (General)| Wafer specifications and Quality Control Methods for Multicrystalline silicon wafers |
| 1. Material : Multicrystalline Silicon |
| 2. Crystal defects : Free of visual precipitation with naked eye |
| 3. Conductivity Type : P-type (Boron Doped) |
| 4. Oxygen Concentration : ≤ 1.0 ＊ 1018 at./cm3 |
| 5. Carbon Concentration : ≤ 1.0 ＊ 1017 at./cm3 |
| 6. Resistivity : 0.5 ~ 3.0Ω·㎝ |
| 7. Minority Carriers Lifetime : ≥2㎲ |
| 8. Square side : (156.0 ± 0.5) mm |
| 9. Symmetry ; As per the drawing in the Enclosure No.1 |
| 10. Thickness : (200 ± 20)㎛ |
| 11. TTV : <40㎛ |
| 12. BOW : <40㎛ |
| 13. Saw Mark (Steps, Grooves, Waviness ) : ≤20㎛ |
| 14. Edge defect : Depth<0.5㎜、Length<0.3㎜ |
| 15. Surface (As-cut and cleaned) ; visible contamination, oil or grease , finger prints, soap stains, slurry stains, epoxy water stains, cracks are not allowed; edge chips under |
| 16. Customer may request the receive reference samples |
 17. Wafers are being stacked into batches of 50 ~ 100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafer is upon customer request. 500 ~ 600 wafers in total are being packed into Styrofoam box. |
| 18. All polystyrene boxes of wafers are identified with : box number; type of wafer; number of wafers per box; all contributing ingot numbers; thickness of wafers; date of packing & out inspection. Drawing 156＊156 wafer Enclosure No.1)
Geometry: |
